Investigation of the electron-acoustic phonon interaction via the deformation and piezoelectric potentials in AlN/GaN resonant tunneling nanostructures

The analytical theory of acoustic phonons arising in the layers a nitride-based nanostructure, taking into account presence piezoelectric effect, was developed. Proposed is based on first obtained exact solutions system consisting equation motion for semiconductor medium and Maxwell equation. electronic spectrum renormalized by their interaction with via deformation potentials developed using method temperature Green's function Dyson Direct calculations electron level shifts decay rates are performed geometric physical parameters new experimentally created nanostructure various values.